Simulation of electroforming of the Pt/NiO/Pt switching memory structure

Abstract

We analyze experimental data on a transient thermal electroforming of a Pt/NiO/Pt unipolar memory switching structure. Numerical simulation of this process shows that the channel can be identified with the melting region of nickel oxide, in which its cross section is determined by the maximal breakdown current, a considerable contribution to which can come from a parasitic capacitance. Rough analytic approximations are given for estimating the channel formation parameters.