Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage

Abstract

Regularities in the breakdown of thin SiO₂ oxide films in metal–oxide–semiconductors structures of power field-effect transistors under the action of single heavy charged particles and a pulsed voltage are studied experimentally. Using a phenomenological approach, we carry out comparative analysis of physical mechanisms and energy criteria of the SiO₂ breakdown in extreme conditions of excitation of the electron subsystem in the subpicosecond time range.