Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

Аннотация

GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300°C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.