Confinement effect on hole polarization in (Ga,Mn)As/AlAs diluted magnetic semiconductor multiple quantum wells

Аннотация

The influence of quantum confinement on the spin polarization of holes in ferromagnetic multiple quantum wells based on (Ga,Mn)As diluted magnetic semiconductor has been investigated. It is shown that the spin polarization of holes in the impurity band is more likely determined by the magnetic properties of GaMnAs rather than the quantum-confinement effect. The model of Mn acceptor in a QW, describing the polarization characteristics of photoluminescence in GaAs: Mn/AlAs QWs, has been developed. Experimental data and theoretical analysis show that the spin polarization of holes in (Ga, Mn)As/AlAs QWs can be explained within a model, which suggests that holes are localized in the impurity band.