Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

Аннотация

The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of ~0.2%.