Effect of the parameters of pulsed anodic formation of porous silicon on its luminescent, paramagnetic, and electrotransport properties

Аннотация

We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of the pulsed mode of formation of porous silicon with a period of a few tenths of a second can dramatically affect the photoluminescence quantum yield and other properties of the material. There is a correlation of the luminescent, electrotransport, and paramagnetic properties of porous silicon formed under different modes.