Отправить статью по E-mail Distribution of 28Si, 29Si, and 30Si isotopes under plastic deformation in subsurface layers of Si: B crystals
- Авторы: Koplak O.V.1,2, Vasil’ev M.A.3, Morgunov R.B.1
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Учреждения:
- Institute of Problems of Chemical Physics
- Taras Shevchenko National University of Kyiv
- Kurdyumov Institute for Metal Physics
- Выпуск: Том 58, № 2 (2016)
- Страницы: 247-250
- Раздел: Semiconductors
- URL: https://journals.rcsi.science/1063-7834/article/view/196906
- DOI: https://doi.org/10.1134/S1063783416020165
- ID: 196906
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Аннотация
The redistribution of 28Si, 29Si, and 30Si isotopes in subsurface layers of Si: B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of 28Si and 29Si isotopes becomes smoother after deformation, whereas the 30Si isotope distribution remains unchanged. A change in the subsurface profile of the 29SiO oxide is observed, which indicates the migration of the 29Si isotope in the composition of oxygen complexes during plastic deformation.
Об авторах
O. Koplak
Institute of Problems of Chemical Physics; Taras Shevchenko National University of Kyiv
Email: morgunov2005@yandex.ru
Россия, ul. Akademika Semenova 1, Moscow oblast, Chernogolovka, 142432; ul. Volodymyrska 64/13, Kyiv, 01601
M. Vasil’ev
Kurdyumov Institute for Metal Physics
Email: morgunov2005@yandex.ru
Украина, Vernadsky Blvd. 36, Kiev, 03680
R. Morgunov
Institute of Problems of Chemical Physics
Автор, ответственный за переписку.
Email: morgunov2005@yandex.ru
Россия, ul. Akademika Semenova 1, Moscow oblast, Chernogolovka, 142432
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