Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures
- 作者: Dunaev A.1, Murin D.1
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隶属关系:
- Ivanovo State University of Chemistry and Technology
- 期: 卷 44, 编号 4 (2018)
- 页面: 438-444
- 栏目: Plasma−Surface Interaction
- URL: https://journals.rcsi.science/1063-780X/article/view/186740
- DOI: https://doi.org/10.1134/S1063780X18040037
- ID: 186740
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详细
Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.
作者简介
A. Dunaev
Ivanovo State University of Chemistry and Technology
编辑信件的主要联系方式.
Email: dunaev-80@mail.ru
俄罗斯联邦, Ivanovo, 153000
D. Murin
Ivanovo State University of Chemistry and Technology
Email: dunaev-80@mail.ru
俄罗斯联邦, Ivanovo, 153000