Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures
- Authors: Dunaev A.V.1, Murin D.B.1
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Affiliations:
- Ivanovo State University of Chemistry and Technology
- Issue: Vol 44, No 4 (2018)
- Pages: 438-444
- Section: Plasma−Surface Interaction
- URL: https://journals.rcsi.science/1063-780X/article/view/186740
- DOI: https://doi.org/10.1134/S1063780X18040037
- ID: 186740
Cite item
Abstract
Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.
About the authors
A. V. Dunaev
Ivanovo State University of Chemistry and Technology
Author for correspondence.
Email: dunaev-80@mail.ru
Russian Federation, Ivanovo, 153000
D. B. Murin
Ivanovo State University of Chemistry and Technology
Email: dunaev-80@mail.ru
Russian Federation, Ivanovo, 153000