A Planar Source of Atmospheric-Pressure Plasma Jet
- Authors: Zhdanova O.S.1, Kuznetsov V.S.2,3, Panarin V.A.2, Skakun V.S.2, Sosnin E.A.2,3, Tarasenko V.F.2
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Affiliations:
- Siberian State Medical University
- Institute of High Current Electronics, Siberian Branch
- Tomsk State University
- Issue: Vol 44, No 1 (2018)
- Pages: 153-156
- Section: Applied Physics
- URL: https://journals.rcsi.science/1063-780X/article/view/186663
- DOI: https://doi.org/10.1134/S1063780X18010166
- ID: 186663
Cite item
Abstract
In a single-barrier discharge with voltage sharpening and low gas consumption (up to 1 L/min), plane atmospheric pressure plasma jets with a width of up to 3 cm and length of up to 4 cm in air are formed in the slit geometry of the discharge zone. The energy, temperature, and spectral characteristics of the obtained jets have been measured. The radiation spectrum contains intense maxima corresponding to vibrational transitions of the second positive system of molecular nitrogen N2 (C3Πu → B3Πg) and comparatively weak transition lines of the first positive system of the N2+ ion (B2Σu+ → X2Σg). By an example of inactivation of the Staphylococcus aureus culture (strain ATCC 209), it is shown that plasma is a source of chemically active particles providing the inactivation of microorganisms.
About the authors
O. S. Zhdanova
Siberian State Medical University
Author for correspondence.
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634050
V. S. Kuznetsov
Institute of High Current Electronics, Siberian Branch; Tomsk State University
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
V. A. Panarin
Institute of High Current Electronics, Siberian Branch
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634055
V. S. Skakun
Institute of High Current Electronics, Siberian Branch
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634055
E. A. Sosnin
Institute of High Current Electronics, Siberian Branch; Tomsk State University
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
V. F. Tarasenko
Institute of High Current Electronics, Siberian Branch
Email: badik@loi.hcei.tsc.ru
Russian Federation, Tomsk, 634055
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