Author Details
Ryazanov, A. I.
Issue | Section | Title | File |
Vol 79, No 14 (2016) | Mathematical Simulation in Nuclear Technologies | Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation | |
Vol 80, No 5 (2017) | Proceedings of LXVI International Conference on Nuclear Spectroscopy and Atomic Nuclei Structure October 11–14, 2016, Sarov, Russia/Elementary Particles and Fields | Application of cyclotrons in beam technologies | |
Vol 81, No 7 (2018) | Article | Radiation-Damaged Tungsten: Production and Study in a Steady-State Plasma Flux | |
Vol 82, No 11 (2019) | Mathematical Modeling in Nuclear Technologies | Modeling the Behavior of a MOS Transistor under Fast Neutron and Gamma Irradiation |