Angular dependence of Raman scattering selection rules for long-wavelength optical phonons in short-period GaAs/AlAs superlattices
- Authors: Volodin V.A.1,2, Sachkov V.A.3, Sinyukov M.P.1
-
Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Omsk Scientific Center, Siberian Branch
- Issue: Vol 123, No 1 (2016)
- Pages: 163-168
- Section: Electronic Properties of Solid
- URL: https://journals.rcsi.science/1063-7761/article/view/190492
- DOI: https://doi.org/10.1134/S1063776116070256
- ID: 190492
Cite item
Abstract
The angular dependence of Raman scattering selection rules for optical phonons in short-period (001) GaAs/AlAs superlattices is calculated and experimentally studied. Experiments are performed using a micro-Raman setup, in the scattering geometry with the wavevectors of the incident and scattered light lying in the plane of superlattices (so-called in-plane geometry). Phonon frequencies are calculated using the Born model taking the Coulomb interaction into account in the rigid-ion approximation. Raman scattering spectra are calculated in the framework of the deformation potential and electro-optical mechanisms. Calculations show an angular dependence of the selection rules for optical phonons with different directions of the wavevectors. Drastic differences in the selection rules are found for experimental and calculated spectra. Presumably, these differences are due to the Fröhlich mechanism in Raman scattering for short-period superlattices.
About the authors
V. A. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: volodin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. A. Sachkov
Omsk Scientific Center, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, Omsk, 644024
M. P. Sinyukov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Supplementary files
