Role of structure imperfection in the formation of the magnetotransport properties of rare-earth manganites with a perovskite structure


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Аннотация

The structure, the structure imperfection, and the magnetoresistance, magnetotransport, and microstructure properties of rare-earth perovskite La0.3Ln0.3Sr0.3Mn1.1O3–δ manganites are studied by X-ray diffraction, thermogravimetry, electrical resistivity measurement, magnetic, 55Mn NMR, magnetoresistance measurement, and scanning electron microscopy. It is found that the structure imperfection increases, and the symmetry of a rhombohedrally distorted Rc perovskite structure changes into its pseudocubic type during isovalent substitution for Ln = La3+, Pr3+, Nd3+, Sm3+, or Eu3+ when the ionic radius of an A cation decreases. Defect molar formulas are determined for a real perovskite structure, which contains anion and cation vacancies. The decrease in the temperatures of the metal–semiconductor (Tms) and ferromagnet–paramagnet (TC) phase transitions and the increase in electrical resistivity ρ and activation energy Ea with increasing serial number of Ln are caused by an increase in the concentration of vacancy point defects, which weaken the double exchange 3d4(Mn3+)–2p6(O2–)–3d3(Mn4+)–V(a)–3d4(Mn3+). The crystal structure of the compositions with Ln = La contains nanostructured planar clusters, which induce an anomalous magnetic hysteresis at T = 77 K. Broad and asymmetric 55Mn NMR spectra support the high-frequency electronic double exchange Mn3+(3d4) ↔ O2–(2p6) ↔ Mn4+(3d3) and indicate a heterogeneous surrounding of manganese by other ions and vacancies. A correlation is revealed between the tunneling magnetoresistance effect and the crystallite size. A composition–structure imperfection–property experimental phase diagram is plotted. This diagram supports the conclusion about a strong influence of structure imperfection on the formation of the magnetic, magnetotransport, and magnetoresistance properties of rare-earth perovskite manganites.

Авторлар туралы

A. Pashchenko

Galkin Donetsk Institute for Physics and Engineering; Tugan-Baranovsky Donetsk National University of Economy and Trade

Хат алмасуға жауапты Автор.
Email: alpash@mail.ru
Украина, Kiev, 03680; Kryvoy Rog, 50005

V. Pashchenko

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

V. Prokopenko

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

V. Turchenko

Joint Institute for Nuclear Research

Email: alpash@mail.ru
Ресей, Dubna, Moscow oblast, 141980

Yu. Revenko

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

A. Mazur

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

V. Sycheva

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

N. Liedienov

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

V. Pitsyuga

Donetsk National University

Email: alpash@mail.ru
Украина, Vinnitsa, 21021

G. Levchenko

Galkin Donetsk Institute for Physics and Engineering

Email: alpash@mail.ru
Украина, Kiev, 03680

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