Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells
- Autores: Kozlov D.1,2, Rumyantsev V.1,2, Morozov S.1,2, Kadykov A.1,3, Fadeev M.1,3, Zholudev M.1,2, Varavin V.4, Mikhailov N.4,5, Dvoretskii S.4,6, Gavrilenko V.1,2, Teppe F.3
-
Afiliações:
- Institute of Microstructure Physics, Russian Academy of Sciences
- Lobachevskii Nizhny Novgorod State University
- Laboratoire Charles Coulomb (L2C), Universite de Montpellier II
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Tomsk State University
- Edição: Volume 127, Nº 6 (2018)
- Páginas: 1125-1129
- Seção: Electronic Properties of Solid
- URL: https://journals.rcsi.science/1063-7761/article/view/193980
- DOI: https://doi.org/10.1134/S1063776118100035
- ID: 193980
Citar
Resumo
The photoluminescence of bulky films and heterostructures with HgCdTe quantum wells is studied in the far IR range upon interband optical excitation. Photoluminescence lines are found whose position is independent of temperature, and intensity nonmonotonically changes with increasing temperature. These lines are shown to be related to the radiative recombination of holes by singly ionized mercury vacancies. A drastic increase in the equilibrium recombination of such centers involved in the formation of the photoluminescence signal with the temperature change from 40 to 70 K leads to the nonmonotonic temperature dependence of the photoluminescence intensity.
Sobre autores
D. Kozlov
Institute of Microstructure Physics, Russian Academy of Sciences; Lobachevskii Nizhny Novgorod State University
Autor responsável pela correspondência
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
V. Rumyantsev
Institute of Microstructure Physics, Russian Academy of Sciences; Lobachevskii Nizhny Novgorod State University
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
S. Morozov
Institute of Microstructure Physics, Russian Academy of Sciences; Lobachevskii Nizhny Novgorod State University
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
A. Kadykov
Institute of Microstructure Physics, Russian Academy of Sciences; Laboratoire Charles Coulomb (L2C), Universite de Montpellier II
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Montpellier, 34090
M. Fadeev
Institute of Microstructure Physics, Russian Academy of Sciences; Laboratoire Charles Coulomb (L2C), Universite de Montpellier II
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Montpellier, 34090
M. Zholudev
Institute of Microstructure Physics, Russian Academy of Sciences; Lobachevskii Nizhny Novgorod State University
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
V. Varavin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: dvkoz@ipmras.ru
Rússia, Novosibirsk, 630090
N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: dvkoz@ipmras.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
S. Dvoretskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Tomsk State University
Email: dvkoz@ipmras.ru
Rússia, Novosibirsk, 630090; Tomsk, 634050
V. Gavrilenko
Institute of Microstructure Physics, Russian Academy of Sciences; Lobachevskii Nizhny Novgorod State University
Email: dvkoz@ipmras.ru
Rússia, Nizhny Novgorod, 603087; Nizhny Novgorod, 603950
F. Teppe
Laboratoire Charles Coulomb (L2C), Universite de Montpellier II
Email: dvkoz@ipmras.ru
França, Montpellier, 34090