Properties of strained TaS3 samples in the state of charge density wave and in the normal state
- Authors: Zybtsev S.G.1, Pokrovskii V.Y.1, Zhigalina O.M.2, Khmelenin D.N.2, Starešinić D.3, Šturm S.4, Tchernychova E.4
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
- Institute of Physics
- National Institute of Chemistry
- Issue: Vol 124, No 4 (2017)
- Pages: 665-677
- Section: Electronic Properties of Solid
- URL: https://journals.rcsi.science/1063-7761/article/view/192120
- DOI: https://doi.org/10.1134/S1063776117030189
- ID: 192120
Cite item
Abstract
The uniaxial strain of quasi-one-dimensional conductor whiskers of orthorhombic TaS3 at a strain higher than εc ~ 0.8% leads to a sharp increase in the coherence of the properties of a charge density wave (CDW), which manifests itself in its motion in fields higher than threshold field Et. During uniaxial elongation, TaS3 is shown to exhibit the following unusual properties even in weak fields: Peierls transition temperature TP depends nonmonotonically on ε, one-dimensional fluctuations weaken near TP, and the coherence length of a charge density increases at T < TP. Investigations in fields higher than Et show that the ultracoherent properties of CDW exist in a wide temperature range and are retained when temperature increases up to TP. These properties of CDW make it possible to observe a sharp increase in Et near TP and an almost jumplike increase in Et at T < 90 K. The increase in Et at TP is explained by a decrease in the coherence volume of CDW because of a fluctuational suppression of the Peierls gap.
About the authors
S. G. Zybtsev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: vadim.pokrovskiy@mail.ru
Russian Federation, ul. Mokhovaya 11-7, Moscow, 125009
V. Ya. Pokrovskii
Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: vadim.pokrovskiy@mail.ru
Russian Federation, ul. Mokhovaya 11-7, Moscow, 125009
O. M. Zhigalina
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: vadim.pokrovskiy@mail.ru
Russian Federation, Leninskii pr. 59, Moscow, 119333
D. N. Khmelenin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: vadim.pokrovskiy@mail.ru
Russian Federation, Leninskii pr. 59, Moscow, 119333
D. Starešinić
Institute of Physics
Email: vadim.pokrovskiy@mail.ru
Croatia, Bijenička Cesta 46, Zagreb, HR-10001
S. Šturm
National Institute of Chemistry
Email: vadim.pokrovskiy@mail.ru
Slovenia, Jamova 39, Ljubljana, SI-1000
E. Tchernychova
National Institute of Chemistry
Email: vadim.pokrovskiy@mail.ru
Slovenia, Jamova 39, Ljubljana, SI-1000
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