Spin Polarization Dynamics of Nonequilibrium Conduction Electrons in Magnetic Junctions
- Authors: Vilkov E.A.1, Mikhailov G.M.2, Nikitov S.A.1, Safin A.R.3, Logunov M.V.1, Korenivskii V.N.4, Chigarev S.G.1, Fomin L.A.2
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
- National Research University MPEI
- Royal Institute of Technology
- Issue: Vol 127, No 6 (2018)
- Pages: 1022-1032
- Section: Order, Disorder, and Phase Transition in Condensed System
- URL: https://journals.rcsi.science/1063-7761/article/view/193933
- DOI: https://doi.org/10.1134/S1063776118120105
- ID: 193933
Cite item
Abstract
The dynamics of the motion of the magnetic moment averaged over an ensemble of nonequilibrium spin-injected electrons in a ferromagnetic junction is considered with allowance for the exchange interaction, as well as the interaction with an external electromagnetic field and a thermostat. The solution of this problem is important for the experimental development of compact terahertz-band radiation sources. The rate of quantum transitions of electrons with opposite spins, which determine the spin relaxation under the interaction with a thermostat, is calculated within the density matrix formalism. It is shown that two spin-relaxation modes can be implemented that correspond to low- and high-Q precession of spin-nonequilibrium injected electrons. The effect of the characteristic features of spin-flip transitions under the relaxation of the magnetic moment on the emission and absorption of photons with-energy corresponding to the energy of effective exchange splitting of spin subbands is discussed.
About the authors
E. A. Vilkov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: e-vilkov@yandex.ru
Russian Federation, Moscow, 125009
G. M. Mikhailov
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
S. A. Nikitov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow, 125009
A. R. Safin
National Research University MPEI
Email: e-vilkov@yandex.ru
Russian Federation, Moscow, 111250
M. V. Logunov
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow, 125009
V. N. Korenivskii
Royal Institute of Technology
Email: e-vilkov@yandex.ru
Sweden, Stockholm, 11428
S. G. Chigarev
Kotel’nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Moscow, 125009
L. A. Fomin
Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences
Email: e-vilkov@yandex.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
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