Dielectric tensor of low-dimensional metal systems

Abstract

The dielectric tensor of a low-dimensional metal system has been introduced on the basis of the density matrix in the relaxation time approximation. The properties of this tensor have been analyzed. It has been proved that anisotropy and nonlocality are decisive features of the response of low-dimensional systems to an electromagnetic field. In particular, the expression has been derived for the dielectric tensor of nanometer- thick metal films. It has been shown that the dielectric tensor components can be reduced to the Drude dielectric function for a homogeneous metal in the case when the film thickness considerably exceeds the effective electron mean free path. The application of the classical distribution function for describing electrons in the film is justified under these conditions.