Email this article Anomalous hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor
- Authors: Arslanov R.K.1, Arslanov T.R.1, Daunov M.I.1
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Affiliations:
- Institute of Physics, Dagestan Scientific Center
- Issue: Vol 124, No 3 (2017)
- Pages: 493-495
- Section: Electronic Properties of Solid
- URL: https://journals.rcsi.science/1063-7761/article/view/192030
- DOI: https://doi.org/10.1134/S1063776117020017
- ID: 192030
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Abstract
The dependences of the electrical resistivity and the Hall coefficient of single-crystal p-InAs〈Mn〉 bulk samples with an acceptor concentration of about 1018 cm–3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p-InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.
About the authors
R. K. Arslanov
Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: arslanovr@gmail.com
Russian Federation, Makhachkala, 367003
T. R. Arslanov
Institute of Physics, Dagestan Scientific Center
Email: arslanovr@gmail.com
Russian Federation, Makhachkala, 367003
M. I. Daunov
Institute of Physics, Dagestan Scientific Center
Email: arslanovr@gmail.com
Russian Federation, Makhachkala, 367003
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