Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals

V. I. Strelov; I. A. Prokhorov; E. N. Korobeinikova; V. S. Sidorov; V. N. Vlasov; V. K. Artemyev

doi:10.1134/S1063774518020281

Development of the Growth Technology of Highly Homogeneous Semiconductor Crystals

作者: Strelov V.I.¹, Prokhorov I.A.¹, Korobeinikova E.N.¹, Sidorov V.S.¹, Vlasov V.N.¹, Artemyev V.K.²
隶属关系:
1. Space Materials Science Laboratory, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Kaluga Branch
2. Joint Stock Company “State Scientific Centre of the Russian Federation–Leypunsky Institute for Physics and Power Engineering,”
期: 卷 63, 编号 2 (2018)
页面: 284-286
栏目: Crystal Growth
URL: https://journals.rcsi.science/1063-7745/article/view/192382
DOI: https://doi.org/10.1134/S1063774518020281
ID: 192382

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详细

Different technological solutions for growing GaSb(Te) and Ge(Ga) single crystals, making it possible to optimize the growth of highly homogeneous (at the microlevel) semiconductor crystals by the Bridgman method, are described. The possibility of implementing steady-state growth conditions (providing uniform dopant distribution over the crystal) has been experimentally confirmed.