X-ray Interferometric Investigation of Strain Fields in Silicon Single Crystals

Аннотация

The dependence of the strain fields arising in the operating parts (units) of a silicon X-ray interferometer under mechanical impact on the dislocation density has been experimentally and theoretically investigated by the X-ray diffraction moiré topography. An X-ray interferometric method is proposed for high-accuracy determination of the elastic modulus of deformed crystal regions containing dislocations that were nucleated under an external impact. The elastic modulus is shown to decrease for a dislocation-containing crystal. The redistribution of the stresses occurring in the region of interferometer unit under study with a change in dislocation density has been investigated.