Catalytic epitaxy of ZnO whiskers via the vapor–crystal mechanism
- Авторлар: Muslimov A.E.1, Butashin A.V.1, Kanevsky V.M.1, Babaev V.A.2, Ismailov A.M.2
-
Мекемелер:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
- Dagestan State University
- Шығарылым: Том 62, № 3 (2017)
- Беттер: 460-463
- Бөлім: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/191048
- DOI: https://doi.org/10.1134/S1063774517030166
- ID: 191048
Дәйексөз келтіру
Аннотация
A model of oriented growth of (0001) ZnO whiskers on sapphire substrates via the vapor–crystal mechanism using the catalytic properties of gold islands is proposed. The morphological transition from the primary pyramidal ZnO structures to hexagonal ZnO whiskers is described in terms of the minimization of the free energy density of three-dimensional heteroepitaxial islands.
Авторлар туралы
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: amuslimov@mail.ru
Ресей, Moscow, 119333
A. Butashin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: amuslimov@mail.ru
Ресей, Moscow, 119333
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics”
Email: amuslimov@mail.ru
Ресей, Moscow, 119333
V. Babaev
Dagestan State University
Email: amuslimov@mail.ru
Ресей, Makhachkala, 367000
A. Ismailov
Dagestan State University
Хат алмасуға жауапты Автор.
Email: amuslimov@mail.ru
Ресей, Makhachkala, 367000
Қосымша файлдар
