Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

Abstract

The growth of cadmium telluride films on a structured (0001) sapphire surface oriented at an angle of 44° to the vapor-flow direction and normal to the steps formed along the \(11\overline 2 0\) direction is studied. It is found that this geometry of the vapor source and a substrate (heated to a temperature of 300°С) provides the growth of single-crystal CdTe films if a step height on the substrate surface is more than 1 nm. The results are explained by the occurrence of a longitudinal component of the diffusion flux of СdTe molecules and atoms toward the steps from the inner side and their high density at the step edge from the outer side due to the presence of the Ehrlich–Schwoebel barrier, which ensures the efficient supply of material and minimum supersaturation necessary for the nucleation at the step edge and growth of oriented CdTe islands. The cadmium telluride films that are grown have the \(\left( {110} \right)\left[ {1\overline 1 0} \right]CdTe\left\| {\left( {0001} \right)} \right.\left[ {11\overline 2 0} \right]A{l_2}{O_3}\) orientation and a composition similar to stoichiometric CdTe.