Investigation of the surface anisotropy of polycrystalline gallium nitride coating using a tunnel microscope equipped with a tip of a boron-doped diamond
- Авторлар: Tsysar’ M.A.1
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Мекемелер:
- Bakul Institute for Superhard Materials
- Шығарылым: Том 38, № 3 (2016)
- Беттер: 176-184
- Бөлім: Production, Structure, Properties
- URL: https://journals.rcsi.science/1063-4576/article/view/185560
- DOI: https://doi.org/10.3103/S1063457616030047
- ID: 185560
Дәйексөз келтіру
Аннотация
The structural features of gallium nitride polycrystalline coating formed on a silicon oxide substrate have been considered. It has been shown experimentally that as crystals grow, not only the surface morphology, but crystalline structure and electrophysical parameters of crystals change also. The topography of crystals surfaces at the initial stage of the coating deposition has been found to form due to a diffusion mass transfer.
Авторлар туралы
M. Tsysar’
Bakul Institute for Superhard Materials
Хат алмасуға жауапты Автор.
Email: ts_maxim@ukr.net
Украина, vul. Avtozavods’ka 2, Kiev, 04074
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