Model of resistive switching in a nonuniformly strained carbon nanotube
- Авторы: Il’ina M.V.1, Blinov Y.F.1, Il’in O.I.1, Guryanov A.V.1, Ageev O.A.1
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Учреждения:
- Research and Education Center Nanotechnologies
- Выпуск: Том 81, № 12 (2017)
- Страницы: 1485-1489
- Раздел: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185258
- DOI: https://doi.org/10.3103/S1062873817120140
- ID: 185258
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Аннотация
The effect elastic strain and piezoelectric charge redistributions have on the transmission of current is considered in a nonuniformly strained carbon nanotube. Both processes result in a reproducible resistive switching effect, allowing the fabrication of memristor structures based on them.
Об авторах
M. Il’ina
Research and Education Center Nanotechnologies
Email: ageev@sfedu.ru
Россия, Taganrog, 347922
Yu. Blinov
Research and Education Center Nanotechnologies
Email: ageev@sfedu.ru
Россия, Taganrog, 347922
O. Il’in
Research and Education Center Nanotechnologies
Email: ageev@sfedu.ru
Россия, Taganrog, 347922
A. Guryanov
Research and Education Center Nanotechnologies
Email: ageev@sfedu.ru
Россия, Taganrog, 347922
O. Ageev
Research and Education Center Nanotechnologies
Автор, ответственный за переписку.
Email: ageev@sfedu.ru
Россия, Taganrog, 347922
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