Promising materials for an electronic component base used to create terahertz frequency range (0.5–5.0 THz) generators and detectors

Аннотация

A THz transistor based on a metamorphic nanoheterostructure with generation frequency f_max = 0.63 THz and a zigzag-shaped gate L_g = 46 nm long is developed. A series of low-temperature GaAs structures are produced, and photoconductive antennas with generation frequencies above 1.5–2 THz are developed on their basis.