Reduction in the contrast of photoconductivity along the area of inhomogeneous P+-N(P)-N+-type silicon structures due to currents along the P+- and N+-type layers

Аннотация

It is shown that photocurrents along p⁺ and n⁺-type layers of a locally probed p⁺-n(p)-n⁺ silicon structure inhomogeneous in area can lead to a substantial drop of contrast of microwave photoconductivity in comparison to its intrinsic contrast. The study is performed using a model with two solar cells connected by a resistor, in which one of the solar cells is illuminated.