Solid-Phase Transformations in Multilayered (Co40Fe40B20)34(SiO2)66–ZnO (SnO2, In2O3) Films

Abstract

Multilayered [(Co₄₀Fe₄₀B₂₀)₃₄(SiO₂)₆₆/ZnO]₁₁₂, [(Co₄₀Fe₄₀B₂₀)₃₄(SiO₂)₆₆/SnO₂]₃₂, and [(Co₄₀Fe₄₀B₂₀)₃₄(SiO₂)₆₆/In₂O₃]₉₂ films with layers 1 nm thick are obtained via the ion-beam sputtering of two targets onto a rotating substrate. Their phase transformations are studied during the thermal treatment of films. Compounds with boron form in films with ZnO and In₂O₃ buffer layers (Co₂FeO₂(BO₃) and InBO₃, respectively). The composition of these compounds is found to depend on the semiconductor that is used and the ratio of layer thickness.