Email this article Size Effect in the Electrical Conductivity of Thin Films of Topological Insulator Bi2Se3
- Authors: Chistyakov V.V.1, Domozhirova A.N.1, Huang J.C.2, Marchenkov V.V.1,3
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Affiliations:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- National Cheng Kung University
- Ural Federal University
- Issue: Vol 83, No 7 (2019)
- Pages: 838-840
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187450
- DOI: https://doi.org/10.3103/S1062873819070116
- ID: 187450
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Abstract
The electrical resistivity of thin films of topological insulator (TI) Bi2Se3 10 to 75 nm thick is measured in the temperature range of 4.2 to 300 K. A size effect is observed in the electrical conductivity of the Bi2Se3 films; i.e., there is a linear dependence of a film’s conductivity on its inverse thickness. It is assumed that a similar effect can be observed in other TIs and in systems with nonuniform distributions of current over the cross section of a sample.
About the authors
V. V. Chistyakov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: march@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
A. N. Domozhirova
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: march@imp.uran.ru
Russian Federation, Yekaterinburg, 620137
J. C. A. Huang
National Cheng Kung University
Email: march@imp.uran.ru
Taiwan, Province of China, Tainan, 70101
V. V. Marchenkov
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences; Ural Federal University
Author for correspondence.
Email: march@imp.uran.ru
Russian Federation, Yekaterinburg, 620137; Yekaterinburg, 620002
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