Effect of Sulfur Vacancies on the Thermoelectric Properties of Galena


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Abstract

Dependences of Seebeck coefficient S, resistivity ρ, and thermal conductivity κ of narrow-gap PbS1 –y (0 ≤ y ≤ 10−3) semiconductor crystals are studied at a temperature of Т = 305 K. It is found via EPR and the Hall approach that the number of sulfur vacancies and vacancy clusters grows along with nonstoichiometry parameter y of PbS1 − y samples. Analysis of dependences S(y), ρ(y), and κ(y) shows that the sulfur vacancies and vacancy clusters form resonance levels in the conduction band of the PbS1 − y crystals that affect their thermoelectric figure of merit.

About the authors

V. A. Golenishchev-Kutuzov

Kazan State Power Engineering University

Email: ulvlad@inbox.ru
Russian Federation, Kazan, 420034

A. M. Sinicin

Kazan State Power Engineering University

Email: ulvlad@inbox.ru
Russian Federation, Kazan, 420034

R. R. Zainullin

Kazan State Power Engineering University

Email: ulvlad@inbox.ru
Russian Federation, Kazan, 420034

V. A. Ulanov

Kazan State Power Engineering University

Author for correspondence.
Email: ulvlad@inbox.ru
Russian Federation, Kazan, 420034

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