Aspects of Modeling the Electron Probe Heating of a Semiconductor Target

Аннотация

The problem of heat distribution in semiconductor materials irradiated by finely focused electron beams with no exchange of heat between the target and environment is investigated by means of mathematical modeling. In quantitatively describing the energy loss of probe electrons, a model applicable to a wide range of solids and primary electron energies is used that describes separately the contributions from absorbed and backscattered electrons to the energy dissipated in the target. The nonmonotonic dependence of the maximum target heating temperature on the primary electron energy is explained using aspects of the proposed approach. Some results are illustrated using the example of semiconductor electronic materials.