Analysis of the Stress Relieving Process in a Semiconductor Heterosystem with a (013) Interface

Аннотация

A theoretical analysis of the process of introducing misfit dislocations into a semiconductor heterostructure with a (013) interface is performed by assuming conditions of quasi-equilibrium process. The mechanism of generation is established for those misfit dislocations, which do not meet the requirement of minimum critical film thickness. The calculations are performed on the basis of the force balance model and allow for the shear stress field in the film and the type of the screw dislocation component.