Formation of PZT Structures on Silicon

Abstract

Properties of thin PbZr_0.52Ti_0.48O₃ (PZT) films on silicon substrates with Al₂O₃ and HfO₂ dielectric barrier layers and LaNiO₃ (LNO) conducting layers are studied. Barrier layers 2–10 nm thick are deposited on silicon wafers by via atomic-layer deposition (ALD). LNO layers are formed via chemical solution deposition. The critical HfO₂ thickness required to prevent diffusion (upon which a perovskite phase forms in PZT films) is found to be 10 nm. The annealing temperature required for the formation of LNO crystalline structure is determined. It is shown that depositing an LNO conducting layer directly onto a silicon surface allows us to obtain PZT films with good crystallinity and electrophysical properties.