Email this article Mathematical modeling of the cathodoluminescence of excitons generated by a narrow electron beam in a semiconductor material
- Authors: Polyakov A.N.1, Stepovich M.A.1,2, Turtin D.V.2
-
Affiliations:
- Kaluga State University
- Ivanovo Branch
- Issue: Vol 80, No 12 (2016)
- Pages: 1436-1440
- Section: Proceedings of the XIX Russian Symposium “On Scanning Electron Microscopy and Analytical Methods of Investigation Used in Solid State Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/184900
- DOI: https://doi.org/10.3103/S1062873816120157
- ID: 184900
Cite item
Open Access
Access granted
Subscription Access
Abstract
A mathematical model of the cathodeluminescence of free excitons excited by a narrow electron beam in a semiconductor material is described and investigated. The model is based on an analytical solution to equations of the three-dimensional diffusion of excitons. It is shown that the model can be used to estimate the diffusivity of excitons from experimental time-of-flight measurements of samples coated with a lightproof mask with round apertures. The parameters of gallium nitride were used in the modeling.
About the authors
A. N. Polyakov
Kaluga State University
Author for correspondence.
Email: andrei-polyakov@mail.ru
Russian Federation, Kaluga, 248023
M. A. Stepovich
Kaluga State University; Ivanovo Branch
Email: andrei-polyakov@mail.ru
Russian Federation, Kaluga, 248023; Ivanovo, 153025
D. V. Turtin
Ivanovo Branch
Email: andrei-polyakov@mail.ru
Russian Federation, Ivanovo, 153025
Supplementary files
