High-Q piezoelectric resonators with a lateral electric field and their potential applications

Аннотация

It is shown for the first time that suppressing parasitic oscillations in a piezoelectric resonator with a lateral electric field by applying a damping coating or by spatially separating the HF electric field source from the resonating plate allows us to achieve record-high Q values for parallel and series resonances. The potential to fabricate an array of acoustically decoupled resonators on a single piezoelectric substrate, and to design microdisplacement sensors with temperature compensation, is also demonstrated for the first time.