SHS of Ti 3 SiC 2 -Based Materials in the Ti–Si–C System: Impact of Silicon Excess

J. Lis; L. Chlubny; K. Witulska; P. Borowiak; K. Kozak; A. Misztal; O. Czajkowska

doi:10.3103/S1061386219040083

SHS of Ti₃SiC₂-Based Materials in the Ti–Si–C System: Impact of Silicon Excess

Авторлар: Lis J.¹, Chlubny L.¹, Witulska K.¹, Borowiak P.¹, Kozak K.¹, Misztal A.¹, Czajkowska O.¹
Мекемелер:
1. AGH University of Science and Technology, Faculty of Materials Science and Ceramics
Шығарылым: Том 28, № 4 (2019)
Беттер: 262-265
Бөлім: Article
URL: https://journals.rcsi.science/1061-3862/article/view/196103
DOI: https://doi.org/10.3103/S1061386219040083
ID: 196103

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Аннотация

For SHS of Ti₃SiC₂-based materials in the Ti–Si–C system, we explored the impact of silicon excess on the composition of resultant MAX-phase material by XRD and SEM methods. After hot pressing, SHS-produced MAX-phase material was found to contain over 88 wt % of Ti₃SiC₂. The SHS-produced powders are sinterable and deserve further studies on their hot pressing and pressure-less reactive sintering.