Fractional Order Theory in a Semiconductor Medium Photogenerated by a Focused Laser Beam

Аннотация

In this paper, the fractional order theory has been applied for thermal, elastic and plasma waves to determine the carrier density, displacement, temperature and stress in a semiconductor medium. The thermal, elastic and plasma waves in a semi-infinite medium photogenerated by a focused laser beam were analyzed. The Laplace transformation is used to express the governing equation and solved analytically by applying eigenvalue approach methodology in that domain. A semiconducting material like as silicon was considered. According to the numerical results and graphics, the fractional order parameter and thermal relaxation time may play an important role in the behavior of all physical quantities.