Shape memory effect in nanosized Ti2NiCu alloy-based composites
- Authors: Beresin M.Y.1, Pushin V.G.2, von Gratowski S.V.1, Pokrovskiy V.Y.1, Zybtsev S.G.1, Shavrov V.G.1, Irzhak A.V.3, Lega P.V.1, Zhikharev A.M.1, Koledov V.V.1, Orlov A.P.1, Kuchin D.S.1, Tabachkova N.Y.4, Dikan V.A.4, Shelyakov A.V.5
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Affiliations:
- Kotel’nikov Institute of Radioengineering and Electronics
- Mikheev Institute of Metal Physics, Ural Branch
- Institute of Problems in Microelectronic Technology and High Purity Substances
- National Research University of Science and Technology
- National Research Nuclear University
- Issue: Vol 62, No 1 (2017)
- Pages: 5-9
- Section: Physics
- URL: https://journals.rcsi.science/1028-3358/article/view/192044
- DOI: https://doi.org/10.1134/S1028335817010050
- ID: 192044
Cite item
Abstract
The shape memory effect (SME) in alloys with a thermoelastic martensite transition opens unique opportunities for the creation of miniature mechanical devices. The SME has been studied in layered composite microstructures consisting of a Ti2NiCu alloy and platinum. It occurs upon a decrease in the active layer thickness at least to 80 nm. Some physical and technological restrictions on the minimum size of a material with SME are discussed.
About the authors
M. Yu. Beresin
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
V. G. Pushin
Mikheev Institute of Metal Physics, Ural Branch
Email: lega_peter@list.ru
Russian Federation, Yekaterinburg, 620990
S. V. von Gratowski
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
V. Ya. Pokrovskiy
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
S. G. Zybtsev
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
V. G. Shavrov
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. V. Irzhak
Institute of Problems in Microelectronic Technology and High Purity Substances
Email: lega_peter@list.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432
P. V. Lega
Kotel’nikov Institute of Radioengineering and Electronics
Author for correspondence.
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. M. Zhikharev
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
V. V. Koledov
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
A. P. Orlov
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
D. S. Kuchin
Kotel’nikov Institute of Radioengineering and Electronics
Email: lega_peter@list.ru
Russian Federation, Moscow, 125009
N. Yu. Tabachkova
National Research University of Science and Technology
Email: lega_peter@list.ru
Russian Federation, Moscow, 119991
V. A. Dikan
National Research University of Science and Technology
Email: lega_peter@list.ru
Russian Federation, Moscow, 119991
A. V. Shelyakov
National Research Nuclear University
Email: lega_peter@list.ru
Russian Federation, Moscow, 115409
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