Study of SiO2 films implanted with 64Zn+ ions and oxidized at elevated temperatures

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Abstract

The results of studying SiO2 films implanted with 64Zn ions with a dose of 5 × 1016 cm–2 at energies of 20 and 120 keV and isochronously oxidized for 1 h at temperatures from 400 to 800°C with a step of 100°C are presented. The profiles of Zn and its oxide were studied using Rutherford backscattering and time-of-flight secondary ion mass spectrometry. The chemical state of zinc and the phase composition of the film were determined by Auger electron spectroscopy and Raman scattering. It was found that after implantation, the zinc distribution had two maxima at depths of 20 and 85 nm, and after annealing at 700°C there was a broadened maximum at a depth of 45 nm. After implantation, a mixture of Zn and ZnO phases was formed in the sample. After annealing at 700°C, only the ZnO phase was formed in the sample, the distribution profile of which had a broadened peak at 45 nm.

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About the authors

V. V. Privezentsev

FSC “Scientific Research Institute for System Analysis RAS”

Author for correspondence.
Email: v.privezentsev@mail.ru
Russian Federation, 117218, Moscow

A. P. Sergeev

FSC “Scientific Research Institute for System Analysis RAS”

Email: v.privezentsev@mail.ru
Russian Federation, 117218, Moscow

A. A. Firsov

FSC “Scientific Research Institute for System Analysis RAS”

Email: v.privezentsev@mail.ru
Russian Federation, 117218, Moscow

V. S. Kulikauskas

Lomonosov Moscow State University

Email: v.privezentsev@mail.ru

Skobeltsyn Institute of Nuclear Physics

Russian Federation, 119991, Moscow

V. V. Zatekin

Lomonosov Moscow State University

Email: v.privezentsev@mail.ru

Skobeltsyn Institute of Nuclear Physics

Russian Federation, 119991, Moscow

E. P. Kirilenko

Institute of Nanotechnology Microelectronics RAS

Email: v.privezentsev@mail.ru
Russian Federation, 119991, Moscow

A. V. Goryachev

Institute of Nanotechnology Microelectronics RAS

Email: v.privezentsev@mail.ru
Russian Federation, 119991, Moscow

V. A. Kovalskiy

Institute of Microelectronics Technology RAS

Email: v.privezentsev@mail.ru
Russian Federation, 142432, Chernogolovka

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Supplementary files

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2. Fig. 1. Experimental RBS spectra after Zn implantation (1) and after annealing at 700°C (2).

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3. Fig. 2. Distributions of Zn+ (1) and ZnO– (2) ions by depth after implantation (a) and after annealing at 700°C (b), obtained using time-of-flight SIMS.

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4. Fig. 3. Deconvolution of the experimental differential Auger peak of Zn (1) by the reference spectra of Zn (metallic) (2) and ZnO (3) for the implanted sample (a) and after annealing at 700°C (b).

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5. Fig. 4. Raman spectra of a silicon oxide film implanted with Zn: a – after implantation (1) and annealing at 400 (2), 600 (3) and 800°C (4); b – decomposition of spectrum 4 into components.

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