Microwave Magnetic Field Coupling with Nitrogen-Vacancy Center Ensembles in Diamond with High Homogeneity


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Аннотация

Electron spin resonance measurements with nitrogen-vacancy (NV) center ensembles in diamond are strongly dependent on a uniform microwave magnetic field. Three different types of microwave resonators are used and are well coupled with the spin ensembles at 2.87 GHz for zero-field splitting of the NV centers. The magnitude and the uniformity of both the horizontal and vertical magnetic fields are extracted and analyzed within a \(1\times 1\times 0.5\) mm3 volume on a diamond sample surface, and the results indicate that the field homogeneity is up to 200 times better than that of the traditional copper wire microwave delivery model. The horizontal magnetic field magnitude homogeneity is better than 5 % over an area of 1 mm2 on the thin film diamond sample with NV ensembles. The average Rabi oscillation frequency is estimated to be 2.3 MHz per 1 W of microwave input power upon strong coherent coupling between the resonators and the spin ensembles. The effect of the nonuniform microwave magnetic field on the spin signal is also discussed. The approach used here will find widespread application in microwave coupling with spin ensembles in thin films.

Авторлар туралы

Ning Zhang

School of Instrumentation and Opto-electronics Engineering, Beihang University

Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

Chen Zhang

School of Instrumentation and Opto-electronics Engineering, Beihang University

Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

Lixia Xu

School of Instrumentation and Opto-electronics Engineering, Beihang University

Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

Ming Ding

School of Instrumentation and Opto-electronics Engineering, Beihang University

Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

Wei Quan

School of Instrumentation and Opto-electronics Engineering, Beihang University

Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

Zheng Tang

Department of Electronic Engineering, East China Normal University

Email: hengyuan@buaa.edu.cn
ҚХР, Shanghai

Heng Yuan

School of Instrumentation and Opto-electronics Engineering, Beihang University

Хат алмасуға жауапты Автор.
Email: hengyuan@buaa.edu.cn
ҚХР, Beijing

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© Springer-Verlag Wien, 2016