Development of Very-Low-Temperature Millimeter-Wave Electron-Spin-Resonance Measurement System
- Authors: Fujii Y.1, Ishikawa Y.2, Ohya K.1,3, Miura S.2,4, Koizumi Y.1, Fukuda A.5, Omija T.1, Mitsudo S.1, Mizusaki T.1, Matsubara A.6, Yamamori H.7, Komori T.2, Morimoto K.2,8, Kikuchi H.2
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Affiliations:
- Research Center for Development of Far-Infrared Region, University of Fukui
- Department of Applied Physics, Graduate School of Engineering, University of Fukui
- KYOCERA Corporation
- Furukawa Electric Co., Ltd
- Department of Physics, Hyogo College of Medicine
- Department of Physics, Kyoto University
- Technical Division, School of Engineering, University of Fukui
- Nidec Corporation
- Issue: Vol 49, No 8 (2018)
- Pages: 783-801
- Section: Original Article
- URL: https://journals.rcsi.science/0937-9347/article/view/248131
- DOI: https://doi.org/10.1007/s00723-018-1027-9
- ID: 248131
Cite item
Abstract
We report the development of a millimeter-wave electron-spin-resonance (ESR) measurement system at the University of Fukui using a 3He/4He dilution refrigerator to reach temperatures below 1 K. The system operates in the frequency range of 125–130 GHz, with a homodyne detection. A nuclear-magnetic-resonance (NMR) measurement system was also developed in this system as the extension for millimeter-wave ESR/NMR double magnetic-resonance (DoMR) experiments. Several types of Fabry–Pérot-type resonators (FPR) have been developed: A piezo actuator attached to an FPR enables an electric tuning of cavity frequency. A flat mirror of an FPR has been fabricated using a gold thin film aiming for DoMR. ESR signal was measured down to 0.09 K. Results of ESR measurements of an organic radical crystal and phosphorous-doped silicon are presented. The NMR signal from 1H contained in the resonator is also detected successfully as a test for DoMR.
About the authors
Y. Fujii
Research Center for Development of Far-Infrared Region, University of Fukui
Author for correspondence.
Email: fujii@apphy.u-fukui.ac.jp
ORCID iD: 0000-0001-6357-3795
Japan, Fukui, 910-8507
Y. Ishikawa
Department of Applied Physics, Graduate School of Engineering, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
K. Ohya
Research Center for Development of Far-Infrared Region, University of Fukui; KYOCERA Corporation
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507; Kyoto
S. Miura
Department of Applied Physics, Graduate School of Engineering, University of Fukui; Furukawa Electric Co., Ltd
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507; Tokyo
Y. Koizumi
Research Center for Development of Far-Infrared Region, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
A. Fukuda
Department of Physics, Hyogo College of Medicine
Email: fujii@apphy.u-fukui.ac.jp
Japan, Mukogawacho 1-1, Nishinomiya, Hyogo, 663-8501
T. Omija
Research Center for Development of Far-Infrared Region, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
S. Mitsudo
Research Center for Development of Far-Infrared Region, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
T. Mizusaki
Research Center for Development of Far-Infrared Region, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
A. Matsubara
Department of Physics, Kyoto University
Email: fujii@apphy.u-fukui.ac.jp
Japan, Kyoto, 606-8501
H. Yamamori
Technical Division, School of Engineering, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
T. Komori
Department of Applied Physics, Graduate School of Engineering, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507
K. Morimoto
Department of Applied Physics, Graduate School of Engineering, University of Fukui; Nidec Corporation
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507; Kyoto
H. Kikuchi
Department of Applied Physics, Graduate School of Engineering, University of Fukui
Email: fujii@apphy.u-fukui.ac.jp
Japan, Fukui, 910-8507