Email this article Spin Centres in SiC for Quantum Technologies
- Authors: Astakhov G.V.1, Simin D.1, Dyakonov V.1, Yavkin B.V.2, Orlinskii S.B.2, Proskuryakov I.I.3, Anisimov A.N.4, Soltamov V.A.4, Baranov P.G.4
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Affiliations:
- Experimental Physics VI, Julius-Maximilians, University of Würzburg
- Federal Center of Shared Facilities of Kazan State University
- Institute of Basic Biological Problems RAS
- Ioffe Institute
- Issue: Vol 47, No 7 (2016)
- Pages: 793-812
- Section: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247508
- DOI: https://doi.org/10.1007/s00723-016-0800-x
- ID: 247508
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Abstract
Atomic-scale colour centres in bulk and nanocrystalline SiC are promising for quantum information processing, photonics and sensing at ambient conditions. Their spin state can be initialized, manipulated and readout by means of optically detected magnetic resonance. It has been shown that there are at least two families of colour centres in SiC with S = 1 and S = 3/2, which have the property of optical alignment of the spin levels and allows a spin manipulation. The ground state and the excited state were demonstrated to have spin S = 3/2 and a population inversion in the ground state can be generated using optical pumping, leading to stimulated microwave emission even at room temperature. By controlling the neutron irradiation fluence, the colour centres concentration can be varied over several orders of magnitude down to a single defect level. Several, separately addressable spin centres have been identified in the same crystal for each polytype, which can be used either for magnetic field or temperature sensing. Some of these spin centres are characterised by nearly temperature independent zero-field splitting, making these centres very attractive for vector magnetometry. Contrarily, the zero-field splitting of the centres in the excited state exhibits a giant thermal shift, which can be used for thermometry applications. Finally coherent manipulation of spin states has been performed at room temperature and even at temperatures higher by hundreds of degrees. SiC is taking on a new role as a flexible and practical platform for harnessing the new quantum technologies.
About the authors
G. V. Astakhov
Experimental Physics VI, Julius-Maximilians, University of Würzburg
Email: victrosoltamov@gmail.com
Germany, Würzburg, 97074
D. Simin
Experimental Physics VI, Julius-Maximilians, University of Würzburg
Email: victrosoltamov@gmail.com
Germany, Würzburg, 97074
V. Dyakonov
Experimental Physics VI, Julius-Maximilians, University of Würzburg
Email: victrosoltamov@gmail.com
Germany, Würzburg, 97074
B. V. Yavkin
Federal Center of Shared Facilities of Kazan State University
Email: victrosoltamov@gmail.com
Russian Federation, Kazan, 420008
S. B. Orlinskii
Federal Center of Shared Facilities of Kazan State University
Email: victrosoltamov@gmail.com
Russian Federation, Kazan, 420008
I. I. Proskuryakov
Institute of Basic Biological Problems RAS
Email: victrosoltamov@gmail.com
Russian Federation, Pushchino, 142290
A. N. Anisimov
Ioffe Institute
Email: victrosoltamov@gmail.com
Russian Federation, St. Petersburg, 194021
V. A. Soltamov
Ioffe Institute
Author for correspondence.
Email: victrosoltamov@gmail.com
Russian Federation, St. Petersburg, 194021
P. G. Baranov
Ioffe Institute
Email: victrosoltamov@gmail.com
Russian Federation, St. Petersburg, 194021
