Influence of Formation Conditions on Structure and Properties of Paramagnetic Centers in Polymorphous Silicon Films
- Autores: Konstantinova E.A.1,2,3, Emelyanov A.V.2, Forsh P.A.1,2, Kashkarov P.K.1,2,3
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Afiliações:
- M.V. Lomonosov Moscow State University
- National Research Center Kurchatov Institute
- Faculty of Nano-, Bio-, Information and Cognitive Technologies, Moscow Institute of Physics and Technology
- Edição: Volume 47, Nº 7 (2016)
- Páginas: 693-700
- Seção: Article
- URL: https://journals.rcsi.science/0937-9347/article/view/247463
- DOI: https://doi.org/10.1007/s00723-016-0772-x
- ID: 247463
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Resumo
Paramagnetic properties of two series of polymorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition with variation of silane and hydrogen gas mixture pressure and substrate temperature have been studied by means of electron paramagnetic resonance (EPR) spectroscopy. For the first time EPR signal with g-tensor values g1 = 1.9984, g2 = 1.9890, g3 = 1.9790 was detected in the polymorphous silicon structure. We have attributed this signal to the electrons trapped in conduction band tail states at the interface between nanocrystals and/or at the grain boundaries between silicon nanocrystals. An activation energy of electron transition from band tail states to the conduction band was estimated approximately to 40 meV. Observed changes of the paramagnetic center concentration vs substrate temperature and gas pressure in the reaction chamber during polymorphous silicon film preparation are discussed.
Sobre autores
E. Konstantinova
M.V. Lomonosov Moscow State University; National Research Center Kurchatov Institute; Faculty of Nano-, Bio-, Information and Cognitive Technologies, Moscow Institute of Physics and Technology
Autor responsável pela correspondência
Email: liza35@mail.ru
Rússia, Moscow, 119991; Moscow, 123182; Dolgoprudny, Moscow Region, 141700
A. Emelyanov
National Research Center Kurchatov Institute
Email: liza35@mail.ru
Rússia, Moscow, 123182
P. Forsh
M.V. Lomonosov Moscow State University; National Research Center Kurchatov Institute
Email: liza35@mail.ru
Rússia, Moscow, 119991; Moscow, 123182
P. Kashkarov
M.V. Lomonosov Moscow State University; National Research Center Kurchatov Institute; Faculty of Nano-, Bio-, Information and Cognitive Technologies, Moscow Institute of Physics and Technology
Email: liza35@mail.ru
Rússia, Moscow, 119991; Moscow, 123182; Dolgoprudny, Moscow Region, 141700
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