High Efficiency Cross-Coupled Charge Pump Circuit with Four-Clock Signals
- Authors: Ma M.1,2, Cai X.1, Jiang J.1, Sun Y.2
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Affiliations:
- Xiangtan University
- University of Hertfordshire
- Issue: Vol 61, No 12 (2018)
- Pages: 565-570
- Section: Article
- URL: https://journals.rcsi.science/0735-2727/article/view/177271
- DOI: https://doi.org/10.3103/S073527271812004X
- ID: 177271
Cite item
Abstract
A fully integrated cross-coupled charge pump circuit for boosting dc-to-dc converter applications with four-clock signals has been proposed. With the new clock scheme, this charge pump eliminates all of the reversion power loss and reduces the ripple voltage. In addition, the largest voltage differences between the terminals of all transistors do not exceed the power supply voltage for solving the gate-oxide overstress problem in the conventional charge pump circuits and enhancing the reliability. This proposed charge pump circuit does not require any extra level shifter; therefore, the power efficiency is increased. The proposed charge pump circuit has been simulated using Spectre in the TSMC 0.18 μm CMOS process. The simulation results show that the maximum voltage conversion efficiency of the new 3-stage cross-coupled circuit with an input voltage of 1.5Vis 99.8%. According to the comparison results of the conventional pump and the enhanced charge pump proposed, the output ripple voltage has been significantly reduced.
About the authors
Minglin Ma
Xiangtan University; University of Hertfordshire
Author for correspondence.
Email: minglin_ma@xtu.edu.cn
China, Xiangtan; Hatfield
Xinglong Cai
Xiangtan University
Email: minglin_ma@xtu.edu.cn
China, Xiangtan
Jin Jiang
Xiangtan University
Email: minglin_ma@xtu.edu.cn
China, Xiangtan
Yichuang Sun
University of Hertfordshire
Email: minglin_ma@xtu.edu.cn
United Kingdom, Hatfield