Measuring Complex for the Diagnostics of the Quality of Light–Emitting Heterostructures According to Photoelectric and Optical Responses Under Local Photoexcitation

Аннотация

We propose an automated measuring complex for the diagnostics of the lateral homogeneity of semiconductor heterostructures by measurements and analysis of the photoelectric and optic responses to their local photoexcitation in static and dynamic modes. The electronic-mechanical and optical positioning systems guarantee the illumination of local region of the investigated structure with a minimum diameter of the spot of 14 μm and a positioning accuracy of 10 μm. It is shown that the measuring complex can be used for the diagnostics of the quality of light-emitting heterostructures, transistors, solar cells, and photodiodes.