Effects of quantum recoil forces in resistive switching in memristors

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Lomonosov Moscow State University

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L. Chua, IEEE Trans. Circuit Theory 18, 507 (1971).
D. Ielmini and H.-S. P. Wong, IEEE Nanotechnol. Mag. 1, 333 (2018).
Z. Wang, H. Wu, G. W. Burr, C. S. Hwang, K. L. Wang, Q. Xia, and J. J. Yang, Nat. Rev. Mater. 5, 173 (2020).
R. Landauer, IBM J. Res. Dev. 1, 223 (1957).
W. Xue, S. Gao, J. Shang, X. Yi, G. Liu, and R. Li, Adv. Electron. Mater. 5, 1800854 (2019).
A. A. Minnekhanov, B. S. Shvetsov, M. M. Martyshov, K. E. Nikiruy, E. V. Kukueva, M. Yu. Presnyakov, P. A. Forsh, V. V. Rylkov, V. V. Erokhin, V. A. Demin, and A. V. Emelyanov, Org. Electron. 74, 89 (2019).
D. Dundas, E. J. McEniry, and T. N. Todorov, Nat. Nanotechnol. 4, 99 (2009).
O. G. Kharlanov, B. S. Shvetsov, V. V. Rylkov, and A. A. Minnekhanov, Phys. Rev. Applied 17, 054035 (2022).
V.-N. Do, Adv. Nat. Sci: Nanosci. Nanotechnol. 5, 033001 (2014).
R. E. Peierls, Quantum Theory of Solids, Oxford University Press, London (1955).
H. W. Sheng, M. J. Kramer, A. Cadien, T. Fujita, and M. W. Chen, Phys. Rev. B 83, 134118 (2011).

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