电邮这篇文章 Electron spin resonance impact on the longitudinal resistance in the quantum Hall regime
- 作者: Bisti V.E.1
-
隶属关系:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- 期: 卷 88, 编号 2 (2024)
- 页面: 207-210
- 栏目: New Materials and Technologies for Security Systems
- URL: https://journals.rcsi.science/0367-6765/article/view/266106
- DOI: https://doi.org/10.31857/S0367676524020075
- EDN: https://elibrary.ru/RTIOZX
- ID: 266106
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详细
The electron spin resonance impact on the longitudinal resistance in the quantum Hall regime near the integer filling factors is considered. For the odd filling factors extra spin excitons are created in the process of the microwave absorption, and the resistance increase due to the effective temperature rise. For the even filling factors in the absorption process depending on the temperature inspired spin polarization leads to transition of the spin-flip excitations to the higher energy short-lived excitations, and as a result the resistance is decreased due to effective temperature decrease.
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作者简介
V. Bisti
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
编辑信件的主要联系方式.
Email: bisti@issp.ac.ru
俄罗斯联邦, Chernogolovka
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