Thermal stability of ferroelectric films based on hafnium-zirconium dioxide on silicon

V. P. Popov; Попов В. П.; V. A. Antonov; Антонов В. А.; F. V. Tikhonenko; Тихоненко Ф. В.; A. V. Myakonkikh; Мяконьких А. В.; K. V. Rudenko; Руденко К. В.

doi:10.31857/S0367676523701508

Thermal stability of ferroelectric films based on hafnium-zirconium dioxide on silicon

作者: Popov V.¹, Antonov V.¹, Tikhonenko F.², Myakonkikh A.¹, Rudenko K.¹
隶属关系:
1. Valiev Institute of Physics and Technology of the Russian Academy of Sciences
2. Федеральное государственное бюджетное учреждение науки “Институт физики полупроводников имени А.В. Ржанова Сибирского отделения Российской академии наук”
期: 卷 87, 编号 6 (2023)
页面: 867-872
栏目: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/135411
DOI: https://doi.org/10.31857/S0367676523701508
EDN: https://elibrary.ru/VMKDGC
ID: 135411

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

The results are presented indicating an increase in thermal stability, as well as structural and electrophysical properties of obtained by plasma-stimulated atomic layer deposition (PEALD) 20 nm ferroelectric HfO₂, Hf_0.5Zr_0.5O₂ films with the inserts of Al₂O₃ monolayers and without them, in metal-ferroelectric-silicon mesa structures, promising for universal memory devices.

作者简介

V. Popov

Valiev Institute of Physics and Technology of the Russian Academy of Sciences

编辑信件的主要联系方式.
Email: popov@isp.nsc.ru
Russia, 117218, Moscow

V. Antonov

Valiev Institute of Physics and Technology of the Russian Academy of Sciences

Email: popov@isp.nsc.ru
Russia, 117218, Moscow

F. Tikhonenko

Федеральное государственное бюджетное учреждение науки
“Институт физики полупроводников имени А.В. Ржанова Сибирского отделения Российской академии наук”

Email: popov@isp.nsc.ru
Россия, Новосибирск

A. Myakonkikh

Valiev Institute of Physics and Technology of the Russian Academy of Sciences

Email: popov@isp.nsc.ru
Russia, 117218, Moscow

K. V. Rudenko

Valiev Institute of Physics and Technology of the Russian Academy of Sciences

Email: popov@isp.nsc.ru
Russia, 117218, Moscow

参考

Khosla R., Sharma S. // ACS Appl. Electron. Mater. 2021. V. 3. No. 7. P. 286.
Wang D., Zhang Y., Wang J. et al. // J. Mater. Sci. Technol. 2022. V. 104. P. 1.
Shen Y., Zhang Z., Zhang Q. et al. // RSC Advances. 2020. V. 10. P. 7812.
Böscke T.S., Müller J., Bräuhaus D. et al. // Appl. Phys. Lett. 2011. V. 99. Art. No. 102903.
Müller J., Yurchuk E., Schlösser T. et al. // Proc. 2012 Symp. VLSI Technology. (Honolulu, 2012). P. 25.
Müller J., Böscke T.S., Schroder U. et al. // Nano Lett. 2012. V. 12. No. 8. P. 4318.
Materano M., Lomenzo P.D., Kersch A. et al. // Inorg. Chem. Front. 2021. V. 8. P. 2650.
Chen H., Zhou X., Tang L. et al. // Appl. Phys. Rev. 2022. V. 9. Art. No. 011307.
Kim H.J., Park M.H., Kim Y.J. et al. // Appl. Phys. Lett. 2014. V. 105. Art. No. 192903.
Migita S., Ota H., Shibuya K. et al. // Japan. J. Appl. Phys. 2019. V. 58. Art. No. SBBA07.
Chesnokov Yu., Miakonkikh A., Rogozhin A. et al. // J. Mater. Sci. 2018. V. 53. P. 1.
Grigoriev A., Azad M.M., McCampbell J. // Rev. Sci. Instrum. 2011. V. 82. No. 12. Art. No. 124704.
Popov V., Antonov V., Tikhonenko F. et al. // J. Physics D. 2021. V. 54. No. 22. Art. No. 2251012021.
Popov V.P., Tikhonenko F.V., Antonov V.A. et al. // Sol. State. Electron. 2022. V. 194. Art. No. 108348.
Долженко Д.И., Бородзюля В.Ф., Захарова И.Б., Сударь Н.Т. // ЖТФ. 2021. Т. 91. № 1. С. 58; Dolzhenko D.I., Borodzyulya V.F., Zakharova I.B., Sudar’ N.T. // Tech. Phys. 2021. V. 66. No. 1. P. 53.
White M.H., Adams D.A., Bu J. // IEEE Circuits Devices Mag. 2000. V. 16. P. 22.
Zhang Y., Shao Y.Y., Lu X.B. et al. // Appl. Phys. Lett. 2014. V. 105. Art. No. 172902.
Mikheev V., Chouprik A., Lebedinskii Y. et al. // ACS Appl. Mater. Interfaces. 2019. V. 11. No. 35. P. 32108.
Fontanini R., Barbot J., Segatto M. // IEEE J. Electron Dev. Soc. 2022. V. 10. P. 593.
Kim H.J., Park M.H., Kim Y.J. et al. // Appl. Phys. Lett. 2014. V. 105. Art. No. 192903.