Email this article Interface electronic states contribution into terahertz photoconductivity in structures based on Hg1 – xCdxTe with inverted energy spectrum
- Authors: Kazakov A.S.1, Galeeva A.V.1, Artamkin A.I.1, Ikonnikov A.V.1, Chmyr S.N.1, Dvoretskiy S.A.2, Mikhailov N.N.2, Bannikov M.I.3, Danilov S.N.4, Ryabova L.I.5, Khokhlov D.R.1,3
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Affiliations:
- Lomonosov Moscow State University, Physics Department
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Lebedev Physical Institute of the Russian Academy of Sciences
- University of Regensburg
- Lomonosov Moscow State University, Chemistry Department
- Issue: Vol 87, No 6 (2023)
- Pages: 843-848
- Section: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135407
- DOI: https://doi.org/10.31857/S0367676523701466
- EDN: https://elibrary.ru/VLVPZT
- ID: 135407
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Abstract
We show the differences in the necessarily formed electronic states at the boundaries of the topological phase with a vacuum and with a trivial buffer in the regions of heterojunction in topological materials based on epitaxial films Hg1 – xCdxTe. It was demonstrated that the PT-symmetric terahertz photoconductivity observed in these structures is due precisely to the states in the region of the topological film/trivial buffer (or cap-layer) interfaces.
About the authors
A. S. Kazakov
Lomonosov Moscow State University, Physics Department
Author for correspondence.
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. V. Galeeva
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. I. Artamkin
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. V. Ikonnikov
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. N. Chmyr
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. A. Dvoretskiy
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
M. I. Bannikov
Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. N. Danilov
University of Regensburg
Email: askazakov@physics.msu.ru
Germany, D-93053 , Regensburg
L. I. Ryabova
Lomonosov Moscow State University, Chemistry Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
D. R. Khokhlov
Lomonosov Moscow State University, Physics Department; Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow; Russia, 119991, Moscow
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