Interface electronic states contribution into terahertz photoconductivity in structures based on Hg1 – xCdxTe with inverted energy spectrum
- 作者: Kazakov A.1, Galeeva A.1, Artamkin A.1, Ikonnikov A.1, Chmyr S.1, Dvoretskiy S.2, Mikhailov N.2, Bannikov M.3, Danilov S.4, Ryabova L.5, Khokhlov D.1,3
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隶属关系:
- Lomonosov Moscow State University, Physics Department
- Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
- Lebedev Physical Institute of the Russian Academy of Sciences
- University of Regensburg
- Lomonosov Moscow State University, Chemistry Department
- 期: 卷 87, 编号 6 (2023)
- 页面: 843-848
- 栏目: Articles
- URL: https://journals.rcsi.science/0367-6765/article/view/135407
- DOI: https://doi.org/10.31857/S0367676523701466
- EDN: https://elibrary.ru/VLVPZT
- ID: 135407
如何引用文章
详细
We show the differences in the necessarily formed electronic states at the boundaries of the topological phase with a vacuum and with a trivial buffer in the regions of heterojunction in topological materials based on epitaxial films Hg1 – xCdxTe. It was demonstrated that the PT-symmetric terahertz photoconductivity observed in these structures is due precisely to the states in the region of the topological film/trivial buffer (or cap-layer) interfaces.
作者简介
A. Kazakov
Lomonosov Moscow State University, Physics Department
编辑信件的主要联系方式.
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Galeeva
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Artamkin
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
A. Ikonnikov
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. Chmyr
Lomonosov Moscow State University, Physics Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. Dvoretskiy
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
N. Mikhailov
Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 630090, Novosibirsk
M. Bannikov
Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
S. Danilov
University of Regensburg
Email: askazakov@physics.msu.ru
Germany, D-93053 , Regensburg
L. Ryabova
Lomonosov Moscow State University, Chemistry Department
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow
D. Khokhlov
Lomonosov Moscow State University, Physics Department; Lebedev Physical Institute of the Russian Academy of Sciences
Email: askazakov@physics.msu.ru
Russia, 119991, Moscow; Russia, 119991, Moscow
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