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Excited states of excitons in monolayers of transition metal dichalcogenides in reflectance spectra up to room temperature
Brichkin A., Golyshkov G., Chernenko A., Bisti V.
Plasma waves in a two-dimensional superlattice under the influence of a nonlinear electromagnetic wave
Agapova I., Glazov S., Kryuchkov S.
Radiation spectra and the quality evaluation of a high-power laser diode when entering the operating mode
Bliznyuk V., Parshin V., Rzhanov A., Semenova O., Tarasov A., Khlyntsev N.
Experimental studies of the generation thresholds of circularly polarized еmission from injection semiconductor lasers
Maksimov A., Tartakovskii I.
Electronic paramagnetic resonance of Gd3+ ions in a Pb1-x-yGdxCuyS narrow-gap semiconductor: effects of resonance transitions on conductivity
Ulanov V., Zaynullin R., Yatsyk I., Shestakov A., Sinitsin A.
Photon detectors and emitters for quantum communication systems and quantum frequency standards
Preobrazhenskii V., Chistokhin I., Ryabtsev I., Haisler V., Toropov A.
Fine and rough structure of the frequency spectrum of high-power laser diodes during slow degradation
Bliznyuk V., Parshin V., Rzhanov A., Semenova O., Tarasov A.
Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb1 – xGdxTe under the influence of electron paramagnetic resonance processes of Gd3+ ions
Ulanov V., Zainullin R., Yatsyk I., Fazlizhanov I.
Non-resonant absorption of the X-band electromagnetic wave power in a narrow-gap PbS semiconductor at temperatures of 2.6–8 K in the range of magnetic fields 0–100 mT
Ulanov V., Zainullin R., Sinitsyn A., Potapov A., Shustov V.
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